 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Semiconductor Laser LNC801PS High Power Output Semiconductor Laser Overview The LNC801PS is a GaAlAs laser diode which provides stable, continuous, single mode oscillation of near infrared light at room temperature. This product can be used in a wide range of light source applications, including laser printers, facsimiles, optical disk memory, and optical information devices. o1.0 min. o5.6 +0 -0.025 o4.30.1 o3.550.1 Unit : mm 2 0.40.1 1101 LD 1 Junction plane Reference plane 1.00.1 3 PD Features Low threshold oscillation Stable single horizontal mode oscillation Built-in PIN photodiode for light output monitors Light output is continuously variable as far as 60 mW Supports direct modulation Near infrared oscillating wavelength Long lifetime, high reliability 2.30.2 1.27 0.25 Reference slot Kovar glass LD pellet Reference plane o1.2max. 3-o0.45 2 1.20.1 6.50.5 0.5 max. 1 o2.0 Bottom view 3 1: LD Anode 2: Common Case 3: PD Cathode Absolute Maximum Ratings (Ta = 25C) Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 60 1.5 30 100 -10 to +60 - 40 to +80 Unit mW V V mW C C Electro-Optical Characteristics (Ta = 25C) Parameter Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle Horizontal direction Vertical direction Symbol Ith IOP VOP L //* * IR IP X Y CW Conditions PO = 50mW PO = 50mW PO = 50mW PO = 50mW PO = 50mW CW PO = 36mW/I(40mW - 4mW) VR (PIN) = 5V PO = 50mW, VR (PIN) = 5V PO = 50mW PO = 50mW min 10 50 815 7 18 0.6 typ 30 70 2.0 830 10 25 1.0 max 50 120 3.0 845 13 28 1.5 0.1 Unit mA mA V nm deg. deg. mW/mA A mA deg. deg. Differential efficiency Reverse current (DC) PIN photo current Optical axis accuracy Oscillation mode * X direction Y direction -2.0 -3.0 +2.0 +3.0 Single horizontal mode // and are the angles where the optical intencity is a half of its max. value.( half full angle ) 1 Semiconductor Laser LNC801PS PO -- IOP 60 200 Ta = 25C 50 I--V 100 Far field pattern PO (mW) 100 Relative radiant power PO 80 60 // Radiant power 30 I (mA) 0 40 Current 40 20 -100 10 20 0 0 40 80 120 -200 -4 -2 0 2 4 0 40 20 0 20 40 Operating current IOP (mA) Voltage V (V) Angle (deg.) Ith -- Ta 10 2 10 3 IOP -- Ta PO = 50mW 100 PO -- Ta IOP (mA) Ith (mA) 80 PO (mW) 10 2 60 Threshold current Operating current 10 Radiant power 10 30 50 70 40 20 1 - 10 10 30 50 70 10 - 10 0 - 10 10 30 50 70 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Ambient temperature Ta (C ) Id -- Ta 10 2 VR (PIN) = 30V 10 Id (nA) PIN dark current 1 10 -1 10 -2 10 -3 - 10 10 30 50 70 Ambient temperature Ta (C ) 2 |
Price & Availability of LNC801PS
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |